Extraction of Tschebysheff design data for the low pass dielectric multilayer

J S Seeley, H M Liddell, T C Chen

Opt. Act. Vol 20, No 8, Pages 641-661 (1973)

Abstract

The extraction of design data for the lowpass dielectric multilayer according to Tschebysheff performance is described. The extraction proceeds initially by analogy with electric-circuit design, and can then be given numerical refinement which is also described. Agreement with the Tschebysheff desideratum is satisfactory. The multilayers extracted by this procedure are of fractional thickness, symmetric with regard to their central layers.

DOI: 10.1080/713818809

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